US Patent 8034315 - Method of forming CNT electronics

http://www.freepatentsonline.com/8034315.html

This patent from Micron Technology teaches a way that carbon nanotube fibers can be arranged to form memory cells capable of storing multi-bit states. Claim 1 reads:

1. A method of forming a device, comprising:

providing a plurality of crossed carbon nanotubes over a semiconductor substrate, the crossed carbon nanotubes forming an undulating upper topography extending across the carbon nanotubes and within spaces between the carbon nanotubes, the spaces having maximum lateral widths, a global maximum lateral width being the greatest lateral width of any of the spaces; and

depositing a material over the crossed nanotubes, the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.