US Patent 7989800 - Double gate nanowire field effect diode

http://www.freepatentsonline.com/7989800.html

This patent from George Mason University teaches a nanowire-based diode which is taught to be useful for photovoltaic switching and solar cell applications. Claim 1 reads:

1. A nanowire field effect junction diode comprising:

a. an electrically insulating transparent substrate;

b. a nanowire disposed on the electrically insulating transparent substrate;

c. an anode contacting a first end of the nanowire;

d. a cathode contacting a second end of the nanowire;

e. an oxide layer covering the nanowire;

f. a first conducting gate: i. disposed on top of the oxide layer; and ii. adjacent with a non-zero separation to the anode; and

g. a second conducting gate: i. disposed on top of the oxide layer; ii. adjacent with a non-zero separation to the cathode; and iii. adjacent with a non-zero separation the first conducting gate.