US Patent 7939404 - Nanowire capacitor grown from graphene mask

http://www.freepatentsonline.com/7939404.html

Further scalability of DRAM memory to the nanoscale may require the use of capacitors formed from carbon nanotubes or nanowires. This patent from Hynix Semiconductor teaches a way to achieve this using graphene based masks. Claim 1 reads:

1. A method for making a capacitor of a semiconductor device, the method comprising:

forming a graphene seed film over a substrate;

performing a first plasma process on the graphene seed;

growing a graphene on the graphene seed film;

growing a nano tube or a nano wire using the graphene as a mask; and

sequentially forming a dielectric film and a conductive layer over the nano tube or the nano wire, wherein the nano tub or the nano wire, the dielectric film, and the conductive layer define the capacitor.