US Patent 7678707 - Fabrication of CNT diode

http://www.freepatentsonline.com/7678707.html

This patent is based on U.S. Naval research and teaches using barium fluoride to establish a diode junction between metallic nanotubes and a semiconductor substrate. Claim 1 reads:

1. A method of producing a nanoShockley diode, the method comprising:

locally modifying electrical conductive properties of a semiconducting carbon nanotube so the properties are similar to electrical conductive properties of graphite,

wherein the locally modifying electrical conductive properties comprises exposing the carbon nanotube to a vapor from a family II salt.